EPITAXIAL-GROWTH OF ERAS ON (100)GAAS

被引：121

作者：

PALMSTROM, CJ

TABATABAIE, N

ALLEN, SJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 26期

关键词：

D O I：

10.1063/1.100173

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2608 / 2610

页数：3

共 24 条

[1]

Allen SJ, UNPUB

[2]

BRIXNER LH, 1960, J INORG NUCL CHEM, V16, P199

[3] SINGLE-CRYSTAL-ALUMINUM SCHOTTKY-BARRIER DIODES PREPARED BY MOLECULAR-BEAM EPITAXY (MBE) ON GAAS [J].

CHO, AY ;

DERNIER, PD .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) :3328-3332

[4]

ELLIOTT RP, 1965, CONSTITUTION BINARY

[5] GROWTH OF ALPHA-RH2AS ON GAAS(001) IN A MOLECULAR-BEAM EPITAXY SYSTEM [J].

GUIVARCH, A ;

SECOUE, M ;

GUENAIS, B ;

BALLINI, Y ;

BADOZ, PA ;

ROSENCHER, E .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (02) :683-687

[6] EPITAXIAL, THERMODYNAMICALLY STABILIZED METAL III-V COMPOUND SEMICONDUCTOR INTERFACE - NIGA ON GAAS (001) [J].

GUIVARCH, A ;

GUERIN, R ;

SECOUE, M .

ELECTRONICS LETTERS, 1987, 23 (19) :1004-1005

[7] QUANTITATIVE APPLICATION OF DYNAMIC DIFFERENTIAL CALORIMETRY .2. HEATS OF FORMATION OF GROUP 3A ARSENIDES [J].

HANKS, R ;

FAKTOR, MM .

TRANSACTIONS OF THE FARADAY SOCIETY, 1967, 63 (533P) :1130-&

[8]

Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700

[9] AN INVESTIGATION OF PREPARATION AND PROPERTIES OF SOME IIIA-VB COMPOUNDS [J].

HISCOCKS, SE ;

MULLIN, JB .

JOURNAL OF MATERIALS SCIENCE, 1969, 4 (11) :962-&

[10]

LEY L, 1979, TOP APPL PHYS, V27, P373

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