RAMAN-SCATTERING STUDIES OF CHEMICAL-VAPOR-DEPOSITED CUBIC SIC FILMS OF (100) SI

被引:173
作者
FENG, ZC
MASCARENHAS, AJ
CHOYKE, WJ
POWELL, JA
机构
[1] UNIV PITTSBURGH,DEPT PHYS & ASTRON,PITTSBURGH,PA 15260
[2] WESTINGHOUSE ELECT CORP,CTR RES & DEV,PITTSBURGH,PA 15235
[3] NASA,LEWIS RES CTR,CLEVELAND,OH 44135
关键词
D O I
10.1063/1.341533
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:3176 / 3186
页数:11
相关论文
共 48 条
[1]  
ABSTREITER G, 1984, FESTKOR-ADV SOLID ST, V24, P291
[2]   CHEMICALLY-FORMED BUFFER LAYERS FOR GROWTH OF CUBIC SILICON-CARBIDE ON SILICON SINGLE-CRYSTALS [J].
ADDAMIANO, A ;
KLEIN, PH .
JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) :291-294
[3]   BUFFER-LAYER TECHNIQUE FOR THE GROWTH OF SINGLE-CRYSTAL SIC ON SI [J].
ADDAMIANO, A ;
SPRAGUE, JA .
APPLIED PHYSICS LETTERS, 1984, 44 (05) :525-527
[4]   EFFECT OF STATIC UNIAXIAL STRESS ON RAMAN SPECTRUM OF SILICON [J].
ANASTASSAKIS, E ;
PINCZUK, A ;
BURSTEIN, E ;
POLLAK, FH ;
CARDONA, M .
SOLID STATE COMMUNICATIONS, 1970, 8 (02) :133-+
[5]   OPTICAL CHARACTERIZATION OF PSEUDOMORPHIC INXGA1-XAS-GAAS SINGLE-QUANTUM-WELL HETEROSTRUCTURES [J].
ANDERSON, NG ;
LAIDIG, WD ;
KOLBAS, RM ;
LO, YC .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) :2361-2367
[6]  
Ashcroft N. W., 1976, SOLID STATE PHYS, P421
[7]  
BORN M, 1980, PRINCIPLES OPTICS, P614
[8]  
BRUESCH P, 1982, PHONONS THEORY EXPT, V1, P128
[9]  
BRUESCH P, 1986, SPRINGER SERIES SOLI, V65, P78
[10]   INSITU INVESTIGATION OF BAND BENDING DURING FORMATION OF GAAS-GE HETEROSTRUCTURES [J].
BRUGGER, H ;
SCHAFFLER, F ;
ABSTREITER, G .
PHYSICAL REVIEW LETTERS, 1984, 52 (02) :141-144