EPITAXIAL-GROWTH OF CDTE ON SI BY FLUORIDE-IIA INTERLAYERING

被引：0
|
作者：
ZOGG, H
MELCHIOR, H
机构：
[1] SWISS FED INST TECHNOL,FACHGRP MIKRO & OPTOELEKTR,CH-8093 ZURICH,SWITZERLAND
[2] SWISS FED INST TECHNOL,AFIF,CH-8093 ZURICH,SWITZERLAND
来源：
HELVETICA PHYSICA ACTA | 1986年 / 59卷 / 6-7期
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D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
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页码：1021 / 1023
页数：3
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