BISTABLE LOCKING OF SINGLE-ELECTRON TUNNELING ELEMENTS FOR DIGITAL CIRCUITRY

被引:20
作者
KIEHL, RA
OHSHIMA, T
机构
[1] Fujitsu Laboratories Ltd., Atsugi 243-01
关键词
D O I
10.1063/1.114436
中图分类号
O59 [应用物理学];
学科分类号
摘要
Bistable phase locking of single-electron tunneling oscillations is proposed as the basis for digital logic circuitry. A simple model of single-electron tunneling is used to examine the locking of capacitively coupled junctions pumped at twice the tunneling frequency and activated by clocking the de bias. The locking to sinusoidal input signals and the locking between coupled junctions is examined. It is shown that bistable locking exhibits an input amplitude threshold and phase noise margin and that junctions rapidly lock in antiphase due to a strong interaction between tunneling events. Conditions under which the operation is potentially useful for digital circuitry are identified. (C) 1995 American Institute of Physics.
引用
收藏
页码:2494 / 2496
页数:3
相关论文
共 7 条