REACTANTS IN SIC CHEMICAL-VAPOR-DEPOSITION USING CH3SIH3 AS A SOURCE GAS

被引：39

作者：

OHSHITA, Y

机构：

[1] Microelectronics Research Laboratories, NEC Corporation, Tsukuba, Ibaraki, 305, 34, Miyukigaoka

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 147卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(94)00656-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The growth mechanism of SiC CVD using CH3SiH3 (1% CH3SiH3 diluted by 99%H-2) as a source gas is studied by the experiment with macro/microcavity method. It is found that there are two types of the important reactants: one is the slightly active source gas CH3SiH3 itself, which reacts directly with the SiC surface. The other is the CH3SiH, which is produced by the thermal decomposition of CH3SiH3 in the gas phase, it is radical and its sticking coefficient is almost 1. Under the kinetic control conditions, the reaction of CH3SiH3 with SiC surface and the decomposition of CH3SiH3 in the gas phase determine the growth rate.

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页码：111 / 116

页数：6

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