Optical Properties of PECVD Si-C-N Films

被引：0

作者：

Kozak, A. O. ^{[1
]}

Ivashchenko, V. I. ^{[1
]}

Porada, O. K. ^{[1
]}

Ivashchenko, L. A. ^{[1
]}

Malakhov, V. Ya ^{[1
]}

Tomila, T. V. ^{[1
]}

机构：

[1] NAS Ukraine, Inst Problems Mat Sci, 3 Krzhyzhanovsky Str, UA-03142 Kiev, Ukraine

来源：

JOURNAL OF NANO- AND ELECTRONIC PHYSICS | 2015年 / 7卷 / 03期

关键词：

PECVD; Hexamethyldisilazane; Si-C-N films; FTIR; Optical spectra;

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The structural properties and the energy gap of Si-C-N films deposited by PECVD method from hexamethyldisilazane in the temperature range of 200-700 degrees C were studied. The films were deposited on silicon and glass substrates that made it possible to perform the XRD analysis and study the absorption infrared (FTIR) and optical spectra. The deconvolution of main band by Gaussians indicates that the main contributions come from the vibrations of Si-C, Si-N and Si-O bonds. It is shown that an intensive effusion of hydrogen from the films occurs with increasing temperature. The band gap decreases from 2.3 to 1.6 eV as substrate temperature is changed from 200 to 700 degrees C.

引用

页数：6

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