EVALUATION OF DEEP LEVELS IN MANGANESE-DOPED POSITIVE TEMPERATURE-COEFFICIENT OF RESISTIVITY CERAMICS BY ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY

被引：1
作者：
HAN, EH
KIM, MC
PARK, SJ
机构：
[1] SEOUL NATL UNIV,DEPT INORGAN MAT ENGN,SEOUL 151742,SOUTH KOREA
[2] KUN SAN NATL UNIV,DEPT MAT SCI & ENGN,KUN SAN 573360,SOUTH KOREA
来源：
JOURNAL OF MATERIALS SCIENCE LETTERS | 1992年 / 11卷 / 20期
关键词：
D O I：
10.1007/BF00729370
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：1385 / 1388
页数：4
相关论文
共 15 条
[1]   BULK ELECTRON TRAPS IN ZINC-OXIDE VARISTORS [J].
CORDARO, JF ;
SHIM, Y ;
MAY, JE .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (12) :4186-4190
[2]   BARIUMTITANAT ALS SPERRSCHICHTHALBLEITER [J].
HEYWANG, W .
SOLID-STATE ELECTRONICS, 1961, 3 (01) :51-58
[3]   HALOGEN TREATMENT OF BARIUM TITANATE SEMICONDUCTORS [J].
JONKER, GH .
MATERIALS RESEARCH BULLETIN, 1967, 2 (04) :401-&
[4]  
Kulwicki B.M., 1981, ADV CERAM, V1, P138
[5]   PTCR EFFECT IN BATIO3 [J].
LEWIS, GV ;
CATLOW, CRA ;
CASSELTON, REW .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1985, 68 (10) :555-558
[6]  
MAEDA T, 1989, NIPPON SERAMIKUSA KY, V97, P1129
[7]   THE ELECTRIC AND OPTICAL BEHAVIOR OF BATIO3 SINGLE-DOMAIN CRYSTALS [J].
MERZ, WJ .
PHYSICAL REVIEW, 1949, 76 (08) :1221-1225
[8]  
NEMOTO H, 1991, J AM CERAM SOC, V7, P1719
[9]  
OKUSHI H, 1980, JPN J APPL PHYS, V19, pL375
[10]  
OKUSHI H, 1986, 867 EL LAB RES REP, P3
12