ZnS Quantum Dots Based Voltage-Sensing Light-Emitting Device

被引:2
作者
Nath, Siddhartha S. [1 ]
Ganguly, Abhigyan [2 ]
Gope, Gautam [1 ]
Kanjilal, Maitreyi R. [3 ]
机构
[1] Assam Univ, Cent Instrumentat Lab, Silchar 788011, India
[2] Natl Inst Technol, Dept Elect & Commun Engn, Silchar 788010, India
[3] Narula Inst Technol, Dept Elect & Commun Engn, Kolkata 700109, India
关键词
Electromagnetic wave sensors; electroluminescence (EL); light-emitting device (LED); quantum dots (QDs); ZnS;
D O I
10.1109/LSENS.2018.2862915
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This article reports the synthesis of ZnS quantum dots (QDs) embedded in polyvinylpyrrolidone matrix via a simple chemical technique and its novel application as a nano-light-emitting device. The synthesized specimen has been characterized by using UV/Vis spectroscopy, X-ray diffraction study, atomic force microscopy, and high-resolution transmission electron microscopy. These studies indicate the sizes of QDs to be within 8 nm. The prepared QD samples have been examined in a fabricated ZnO/QD-based nano-light-emitting device by exploring the variation of electroluminescence (EL) (light emission phenomenon) with supply voltage at room temperature. The almost linear variation of EL intensity with voltage is obtained for a specific range of voltage, which makes ZnS nanoparticles suitable for light-emitting devices.
引用
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页数:4
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