COMPARISON OF HOT ELECTRON DIFFUSION RATES FOR GAAS AND INP

被引：24

作者：

BAUHAHN, PE ^{[1
]}

HADDAD, GI ^{[1
]}

MASNARI, NA ^{[1
]}

机构：

[1] UNIV MICHIGAN,DEPT ELECT & COMP ENGN,ELECTR PHYS LAB,ANN ARBOR,MI 48104

来源：

ELECTRONICS LETTERS | 1973年 / 9卷 / 19期

关键词：

D O I：

10.1049/el:19730335

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：460 / 461

页数：2

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FAWCETT, W ;

REES, HD .

PHYSICS LETTERS A, 1969, A 29 (10) :578-&

[4] MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE [J].

FAWCETT, W ;

BOARDMAN, AD ;

SWAIN, S .

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[5] CALCULATION OF VELOCITY-FIELD CHARACTERISTIC OF N-INP [J].

HAMMAR, C ;

VINTER, B .

SOLID STATE COMMUNICATIONS, 1972, 11 (05) :751-&

[6] DIFFUSION OF HOT-ELECTRONS IN N INDIUM PHOSPHIDE [J].

HAMMAR, C ;

VINTER, B .

ELECTRONICS LETTERS, 1973, 9 (01) :9-10

[7]

KALLBACK B, 1973, ELECTRON LETT, V9, P11, DOI 10.1049/el:19730008

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