DESIGN AND REALIZATION OF HIGH-VOLTAGE MOS THYRISTOR DEVICE

We present here the results obtained in the design and fabrication of high voltage M.O.S thyristor device. In this context, we intend to study the potentialities of this kind of device and to develop a high voltage planar technological process to realize the device based on the concept of functionnal integration of M.O.S and thyristor elements. To optimize this integrated device, an analytical model and 2D electrical simulator PISCES are used. The optimization of the technological process is obtained by using the 1D and 2D technological simulator SUPREM IV. These devices are fabricated and tested. These structures present interesting electrical characteristics such as high dV/dt capability which is about 10.000 V/mu s. We discuss these potentialities and compare them to the classical thyristor structure.