VALENCE-BAND OFFSET AT ALXGA1-XAS/GAAS - APPLICATION OF AVERAGE-BOND-ENERGY THEORY IN CONJUNCTION WITH THE CLUSTER-EXPANSION METHOD

被引：14

作者：

WANG, RZ ^{[1
]}

KE, SH ^{[1
]}

HUANG, MC ^{[1
]}

机构：

[1] XIAMEN UNIV,DEPT PHYS,XIAMEN 361005,PEOPLES R CHINA

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.51.1935

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We suggest a theoretical method for the determination of valence-band offsets at alloy-type heterojunctions that is based on average-bond-energy theory in conjunction with a cluster expansion method. The application of this method to AlxGa1-xAs/GaAs produces results in very good agreement with relevant experimental data. © 1995 The American Physical Society.

引用

页码：1935 / 1937

页数：3

共 6 条

[1] Valence-band offset at AlxGa1-xAs/GaAs: Application of average-bond-energy theory in conjunction with the cluster expansion method
Wang, R.-Z.
Ke, S.-H.
Huang, M.-C.
Physical Review B: Condensed Matter, 51 (03):
[2] Application of average-bond-energy method in strained-layer heterojunction band offset
Li, Shuping
Wang, Renzhi
Zheng, Yongmei
Cai, Shuhui
He, Guomin
Wuli Xuebao/Acta Physica Sinica, 2000, 49 (08): : 1441 - 1446
[3] PRESSURE-DEPENDENCE OF THE VALENCE-BAND DISCONTINUITY IN GAAS/ALAS AND GAAS/ALXGA1-XAS QUANTUM-WELL STRUCTURES
LAMBKIN, JD
ADAMS, AR
DUNSTAN, DJ
DAWSON, P
FOXON, CT
PHYSICAL REVIEW B, 1989, 39 (08): : 5546 - 5549
[4] PRESSURE-DEPENDENCE OF GAAS/ALXGA1-XAS QUANTUM-WELL BOUND-STATES - THE DETERMINATION OF VALENCE-BAND OFFSETS
WOLFORD, DJ
KUECH, TF
BRADLEY, JA
GELL, MA
NINNO, D
JAROS, M
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 1043 - 1050
[5] Average bond energy model for determining valence-band offsets at strained heterointerfaces Si,Ge,InP,GaAs/GexSi1-x
J Appl Phys, 2 (872):
[6] Average bond energy model for determining valence-band offsets at strained heterointerfaces Si,Ge,InP,GaAs/GexSi1-x
Ke, SH
Wang, RZ
Huang, MC
JOURNAL OF APPLIED PHYSICS, 1996, 80 (02) : 872 - 879

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