BAND-GAP-RESONANT NON-LINEAR REFRACTION IN III-V SEMICONDUCTORS

被引:239
作者
MILLER, DAB
SEATON, CT
PRISE, ME
SMITH, SD
机构
关键词
D O I
10.1103/PhysRevLett.47.197
中图分类号
O4 [物理学];
学科分类号
0702 ;
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页码:197 / 200
页数:4
相关论文
共 17 条
[1]  
BLOEMBERGEN N, 1965, NONLINEAR OPTICS, pCH8
[2]   INDIRECT TRANSITIONS AT THE CENTER OF THE BRILLOUIN ZONE WITH APPLICATION TO INSB, AND A POSSIBLE NEW EFFECT [J].
DUMKE, WP .
PHYSICAL REVIEW, 1957, 108 (06) :1419-1425
[3]   RECOMBINATION CENTERS IN INSB [J].
HOLLIS, JEL ;
CHOO, SC ;
HEASELL, EL .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (04) :1626-&
[4]  
Johnson E. J., 1967, SEMICONDUCT SEMIMET, V3
[5]   BAND STRUCTURE OF INDIUM ANTIMONIDE [J].
KANE, EO .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) :249-261
[6]   DEGENERATE 4-WAVE MIXING IN INSB AT 5K [J].
MILLER, DAB ;
HARRISON, RG ;
JOHNSTON, AM ;
SEATON, CT ;
SMITH, SD .
OPTICS COMMUNICATIONS, 1980, 32 (03) :478-480
[7]   THE MICROSCOPIC MECHANISM OF 3RD-ORDER OPTICAL NONLINEARITY IN INSB [J].
MILLER, DAB ;
SMITH, SD ;
WHERRETT, BS .
OPTICS COMMUNICATIONS, 1980, 35 (02) :221-226
[8]   OPTICAL BISTABILITY IN SEMICONDUCTORS [J].
MILLER, DAB ;
SMITH, SD ;
SEATON, CT .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (03) :312-317
[9]   2 BEAM OPTICAL SIGNAL AMPLIFICATION AND BISTABILITY IN INSB [J].
MILLER, DAB ;
SMITH, SD .
OPTICS COMMUNICATIONS, 1979, 31 (01) :101-104
[10]   OPTICAL BISTABILITY AND SIGNAL AMPLIFICATION IN A SEMICONDUCTOR CRYSTAL - APPLICATIONS OF NEW LOW-POWER NON-LINEAR EFFECTS IN INSB [J].
MILLER, DAB ;
SMITH, SD ;
JOHNSTON, A .
APPLIED PHYSICS LETTERS, 1979, 35 (09) :658-660