THERMAL IONIZATION RATES AND ENERGIES OF HOLES AT DOUBLE ACCEPTOR ZINC CENTERS IN SILICON

被引：66

作者：

HERMAN, JM

SAH, CT

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1972年 / 14卷 / 02期

关键词：

D O I：

10.1002/pssa.2210140203

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：405 / 415

页数：11

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[4] DETERMINATION OF DEEP LEVEL CENTER ENERGY AND CONCENTRATION BY THERMALLY STIMULATED CONDUCTIVITY MEASUREMENTS USING REVERSE-BIASED P-N JUNCTIONS [J].

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[7]

FU HS, TO BE PUBLISHED

[8] DIFFUSION AND ELECTRICAL BEHAVIOR OF ZINC IN SILICON [J].

FULLER, CS ;

MORIN, FJ .

PHYSICAL REVIEW, 1957, 105 (02) :379-383

[9]

GLOVER HG, 1972, IEEE T ELECTRON DEVI, V19, P138

[10]

HARKE JL, 1968, J APPL PHYS, V39, P4871

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