TIME EVOLUTION OF CAPTURE CROSS-SECTIONS OF RADIATION-INDUCED SI/SIO2 INTERFACE TRAPS STUDIED BY SINGLE-FREQUENCY AC CONDUCTANCE TECHNIQUE

被引：11

作者：

CHEN, WL ^{[1
]}

MA, TP ^{[1
]}

机构：

[1] YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 02期

关键词：

D O I：

10.1063/1.349649

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the time-dependent evolution of the capture cross sections of interface traps in metal/SiO2/Si capacitors after they are created by x-ray irradiation. A single-frequency ac conductance technique was used in this study. The capture cross section decreases significantly right after irradiation, and gradually recovers over a time scale similar to that of the interface-trap transformation process reported previously [T. P. Ma, Semicond. Sci. Technol. 4, 1061 (1989)]. The x-ray dose dependence and the effect of PMA (post-metal anneal) will also be presented.

引用

页码：860 / 866

页数：7

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