FABRY-PEROT OPTICAL-INTENSITY MODULATOR AT 1.3 MU-M IN SILICON

被引：21
|
作者：
XIAO, X
STURM, JC
GOEL, KK
SCHWARTZ, PV
机构：
[1] Department of Electrical Engineering, Princeton University, Princeton, NJ
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 03期
基金：
美国国家科学基金会;
关键词：
Fabry-Perot Cavity - Optical Intensity Modulator - Optical Phase Modulator - SIMOX Process;
D O I：
10.1109/68.79763
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report a new type of all silicon surface-normal optical intensity modulator at 1.3-mu-m, which can be easily butt-coupled with a cleaved single mode fiber. The device utilizes free carrier effects in silicon to achieve phase modulation, and a built-in Fabry-Perot cavity to convert the phase modulation into intensity modulation. We have demonstrated 10% modulation depth with driving current density as low as 6 x 10(3) A/cm2, which is an order of magnitude smaller than the best result ever reported for silicon optical modulators. The measured 3 dB bandwidth is 40 MHz.
引用
收藏
页码：230 / 231
页数：2
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