ELECTRONIC STRUCTURES OF SEMICONDUCTOR ALLOYS

被引：664
作者：
VANVECHTEN, JA
BERGSTRESSER, TK
机构：
来源：
PHYSICAL REVIEW B-SOLID STATE | 1970年 / 1卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.1.3351
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：3351 / +
页数：1
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共 33 条
[1]   SCREENED MODEL POTENTIAL FOR 25 ELEMENTS [J].
ANIMALU, AOE ;
HEINE, V .
PHILOSOPHICAL MAGAZINE, 1965, 12 (120) :1249-&
[2]  
ANIMALU AOE, 4 CAV LAB SOL STAT T
[3]  
ASPNES DE, PRIVATE COMMUNICATIO
[4]   ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE [J].
CARDONA, M ;
SHAKLEE, KL ;
POLLAK, FH .
PHYSICAL REVIEW, 1967, 154 (03) :696-+
[5]   OPTICAL PROPERTIES OF SILVER AND CUPROUS HALIDES [J].
CARDONA, M .
PHYSICAL REVIEW, 1963, 129 (01) :69-+
[6]   BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J].
COHEN, ML ;
BERGSTRESSER, TK .
PHYSICAL REVIEW, 1966, 141 (02) :789-+
[7]   OBSERVATION OF ANDERSON LOCALIZATION IN AN ELECTRON GAS [J].
CUTLER, M ;
MOTT, NF .
PHYSICAL REVIEW, 1969, 181 (03) :1336-&
[8]   LOW-LEVEL INTERBAND ABSORPTION IN PHOSPHORUS-RICH GALLIUM ARSENIDE-PHOSPHIDE [J].
DEAN, PJ ;
KAMINSKY, G ;
ZETTERST.RB .
PHYSICAL REVIEW, 1969, 181 (03) :1149-&
[9]   EVIDENCE FOR A SHARP ABSORPTION EDGE IN AMORPHOUS GE [J].
DONOVAN, TM ;
SPICER, WE ;
BENNETT, JM .
PHYSICAL REVIEW LETTERS, 1969, 22 (20) :1058-&
[10]   PSEUDOPOTENTIALS IN ALLOYS AND CALCULATION OF RESIDUAL RESISTIVITY [J].
GUPTA, OP .
PHYSICAL REVIEW, 1968, 174 (03) :668-&
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