SIGNAL, RECOMBINATION EFFECTS AND NOISES IN AMORPHOUS-SILICON DETECTORS

被引：17

作者：

PEREZMENDEZ, V ^{[1
]}

KAPLAN, SN ^{[1
]}

WARD, W ^{[1
]}

QURESHI, S ^{[1
]}

STREET, RA ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1987年 / 260卷 / 01期

关键词：

D O I：

10.1016/0168-9002(87)90403-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：195 / 200

页数：6

共 18 条

[1]

COLEMAN J, PLASMA PHYSICS

[2] ANALYSIS OF CAUSES OF PULSE-HEIGHT DEFECT AND ITS MASS DEPENDENCE FOR HEAVY-ION SILICON DETECTORS [J].

FINCH, EC .

NUCLEAR INSTRUMENTS & METHODS, 1973, 113 (01) :41-49

[3]

JARRETT B, COMMUNICATION

[4] DETECTION OF CHARGED-PARTICLES IN AMORPHOUS-SILICON LAYERS [J].

KAPLAN, SN ;

MOREL, JR ;

MULERA, TA ;

PEREZMENDEZ, V ;

SCHNURMACHER, G ;

STREET, RA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (01) :351-354

[5] ENERGY DEPENDENCE OF PULSE HEIGHT DEFECT IN SILICON PARTICLE DETECTORS [J].

KRULISCH, AH ;

AXTMANN, RC .

NUCLEAR INSTRUMENTS & METHODS, 1967, 55 (02) :238-+

[6]

MOREL J, 1986, LBL21728 LAWR BERK L

[7] DETECTION OF CHARGED-PARTICLES IN AMORPHOUS-SILICON LAYERS [J].

PEREZMENDEZ, V ;

MOREL, J ;

KAPLAN, SN ;

STREET, RA .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1986, 252 (2-3) :478-482

[8]

REIMER JA, COMMUNICATION

[9] ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE [J].

SPEAR, WE ;

LECOMBER, PG .

PHILOSOPHICAL MAGAZINE, 1976, 33 (06) :935-949

[10] EFFECTS OF DOPING ON TRANSPORT AND DEEP TRAPPING IN HYDROGENATED AMORPHOUS-SILICON [J].

STREET, RA ;

ZESCH, J ;

THOMPSON, MJ .

APPLIED PHYSICS LETTERS, 1983, 43 (07) :672-674

← 1 2 →