RECIPROCITY IN SILICON SCHOTTKY-BARRIER DIODES

被引：0

作者：

ANAND, Y

DOHERTY, WE

机构：

来源：

关键词：

D O I：

10.1049/el:19670180

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：236 / &

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[31] A BURNOUT CRITERION FOR SCHOTTKY-BARRIER MIXER DIODES
ANAND, Y
HOWELL, C
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (11): : 2098 - &
[32] DOWN CONVERSION BY MEANS OF SCHOTTKY-BARRIER DIODES
BUCHS, JD
NACHRICHTENTECHNISCHE ZEITSCHRIFT, 1972, 25 (07): : 305 - +
[33] TUNGSTEN-SEMICONDUCTOR SCHOTTKY-BARRIER DIODES
CROWELL, CR
SARACE, JC
SZE, SM
TRANSACTIONS OF THE METALLURGICAL SOCIETY OF AIME, 1965, 233 (03): : 478 - &
[34] DIODES WITH SCHOTTKY-BARRIER UNDER UNIFORM PRESSURE
VILISOV, AA
FILONOV, NG
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1977, (02): : 146 - 148
[35] AU-SIC SCHOTTKY-BARRIER DIODES
WU, SY
CAMPBELL, RB
SOLID-STATE ELECTRONICS, 1974, 17 (07) : 683 - 687
[36] ON THE CONTRIBUTION OF RECOMBINATION CURRENTS IN SCHOTTKY-BARRIER DIODES
WOODS, NJ
HALL, S
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (12) : 2295 - 2297
[37] Investigation of the Parameters of Schottky-Barrier Diodes.
Wosinski, Tadeusz
Jelenski, Andrzej
Elektronika, 1975, 16 (05): : 195 - 198
[38] INTERFACES AND RECOMBINATION CURRENTS IN SCHOTTKY-BARRIER DIODES
LADBROOKE, PH
SOLID-STATE ELECTRONICS, 1972, 15 (01) : 139 - +
[39] SUBMILLIMETER DETECTORS USING SCHOTTKY-BARRIER DIODES
AVERIN, SV
POPOV, VA
RADIOTEKHNIKA I ELEKTRONIKA, 1977, 22 (05): : 1057 - 1061
[40] HYDROGEN-SENSITIVE SCHOTTKY-BARRIER DIODES
ITO, K
SURFACE SCIENCE, 1979, 86 (JUL) : 345 - 352