SELF-OSCILLATIONS OF THE CURRENT IN DOPED SEMICONDUCTOR SUPERLATTICES

被引:67
作者
GRAHN, H [1 ]
KASTRUP, J [1 ]
PLOOG, K [1 ]
BONILLA, L [1 ]
GALAN, J [1 ]
KINDELAN, M [1 ]
MOSCOSO, M [1 ]
机构
[1] UNIV CARLOS MADRID 3, ESCUELA POLITECN SUPER, E-28911 LEGANES, SPAIN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1995年 / 34卷 / 8B期
关键词
SUPERLATTICES; NONLINEAR DYNAMICS; ELECTRIC-FIELD DOMAINS; RESONANT TUNNELING;
D O I
10.1143/JJAP.34.4526
中图分类号
O59 [应用物理学];
学科分类号
摘要
Self-sustained current oscillations have been found in doped GaAs-AlAs superlattices and are investigated experimentally and theoretically, The electric-field distribution in doped superlattices becomes unstable if the carrier density is not sufficiently large to form stable domains. The instability results in self-oscillations of the current, which are due to an oscillatory motion of the domain boundary in the superlattice. A discrete drift model taking into account several regions of negative differential velocity and a large electron density clearly establishes the origin of these oscillations.
引用
收藏
页码:4526 / 4528
页数:3
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