STRUCTURE AND CHARACTERISTICS OF SILICON CARBIDE LIGHT-EMITTING JUNCTIONS

被引:63
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PATRICK, L
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10.1063/1.1722851
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O59 [应用物理学];
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页码:765 / 776
页数:12
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共 21 条
[1]  
BUSCH G, 1946, HELV PHYS ACTA, V19, P463
[2]  
BUSCH G, 1946, HELV PHYS ACTA, V19, P167
[3]   ABSORPTION OF LIGHT IN ALPHA SIC NEAR THE BAND EDGE [J].
CHOYKE, WJ ;
PATRICK, L .
PHYSICAL REVIEW, 1957, 105 (06) :1721-1723
[4]  
CHOYKE WJ, UNPUBLISHED
[5]   PHOTON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON [J].
CHYNOWETH, AG ;
MCKAY, KG .
PHYSICAL REVIEW, 1956, 102 (02) :369-376
[6]  
Claus B, 1931, ANN PHYS-BERLIN, V11, P331
[7]   FORWARD CHARACTERISTIC OF GERMANIUM POINT CONTACT RECTIFIERS [J].
CUTLER, M .
JOURNAL OF APPLIED PHYSICS, 1955, 26 (08) :949-954
[8]   POWER RECTIFIERS AND TRANSISTORS [J].
HALL, RN .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1512-1518
[9]   DIE ABHANGIGKEIT DER STROMDICHTE EINES P-I-N GLEICHRICHTERS VON DER BREITE SEINER MITTELZONE [J].
HERLET, A .
ZEITSCHRIFT FUR PHYSIK, 1955, 141 (03) :335-345
[10]  
HERLET A, 1955, Z ANGEW PHYS, V7, P99