NIOBIUM SILICIDE FORMATION INDUCED BY AR-ION BOMBARDMENT

被引：31

作者：

KANAYAMA, T

TANOUE, H

TSURUSHIMA, T

机构：

[1] Electrotechnical Laboratory, Tanashi, Tokyo 188

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 03期

关键词：

D O I：

10.1063/1.91102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of Ar-ion bombardment on evaporated-Nb-on-Si systems has been investigated with He backscattering and x-ray-diffraction measurements. High-dose bombardment with energetic Ar ions was found to induce intermixing between Nb and Si in the form of NbSi2. This effect has strong dependence on temperature during bombardment, although it cannot be explained as enhanced diffusion due to radiation damage or ion-beam heating.

引用

页码：222 / 224

页数：3

共 7 条

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[2]

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[3]

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[6]

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[7]

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