SHALLOW ACCEPTORS AND P-TYPE ZNSE

被引：86

作者：

KOSAI, K

FITZPATRICK, BJ

GRIMMEISS, HG

BHARGAVA, RN

NEUMARK, GF

机构：

[1] Philips Laboratories, Briarcliff Manor

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 02期

关键词：

D O I：

10.1063/1.91034

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Shallow acceptors have been incorporated in ZnSe by liquid-phase epitaxy using Bi as a solvent. Epilayers with Li, Na, N, and P as dopants were proven to be p type by establishing the position of the Fermi level by photocapacitance and photoconductivity measurements, and by measuring the potential drop at biased Schottky barriers.

引用

页码：194 / 196

页数：3

共 14 条

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