EXCITON ELECTROABSORPTION AT ROOM-TEMPERATURE IN INGAAS/INP MULTIQUANTUM-WELL STRUCTURES GROWN BY ATMOSPHERIC-PRESSURE MOCVD

被引：12
作者：
MOSELEY, AJ
SCOTT, MD
WILLIAMS, PJ
WALLIS, RH
DAVIES, JI
RIFFAT, JR
机构：
来源：
ELECTRONICS LETTERS | 1987年 / 23卷 / 10期
关键词：
D O I：
10.1049/el:19870373
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：516 / 518
页数：3
相关论文
共 6 条
[1]   QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES [J].
DINGLE, R ;
WIEGMANN, W ;
HENRY, CH .
PHYSICAL REVIEW LETTERS, 1974, 33 (14) :827-830
[2]   ELECTRIC-FIELD DEPENDENCE OF OPTICAL-ABSORPTION NEAR THE BAND-GAP OF QUANTUM-WELL STRUCTURES [J].
MILLER, DAB ;
CHEMLA, DS ;
DAMEN, TC ;
GOSSARD, AC ;
WIEGMANN, W ;
WOOD, TH ;
BURRUS, CA .
PHYSICAL REVIEW B, 1985, 32 (02) :1043-1060
[3]   ROOM-TEMPERATURE EXCITONS IN GA0.47IN0.53AS-INP SUPERLATTICES GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
RAZEGHI, M ;
NAGLE, J ;
MAUREL, P ;
OMNES, F ;
POCHOLLE, JP .
APPLIED PHYSICS LETTERS, 1986, 49 (17) :1110-1111
[4]  
SCOTT MD, 1984, J CRYSTAL GROWTH, V63, P319
[5]   PHOTOCURRENT RESPONSE OF GAINAS/INP MULTIPLE QUANTUM WELL DETECTORS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY [J].
TEMKIN, H ;
PANISH, MB ;
LOGAN, RA .
APPLIED PHYSICS LETTERS, 1985, 47 (09) :978-980
[6]   HIGH-TEMPERATURE EXCITONS AND ENHANCED ELECTROABSORPTION IN INGAAS/INALAS MULTIPLE QUANTUM WELLS [J].
WAKITA, K ;
KAWAMURA, Y ;
YOSHIKUNI, Y ;
ASAHI, H .
ELECTRONICS LETTERS, 1985, 21 (13) :574-576
1