THEORETICAL AND EXPERIMENTAL-ANALYSIS OF THE SWITCHING MECHANISM IN HETEROSTRUCTURE HOT-ELECTRON DIODES

被引:25
作者
HIGMAN, TK [1 ]
HIGMAN, JM [1 ]
EMANUEL, MA [1 ]
HESS, K [1 ]
COLEMAN, JJ [1 ]
机构
[1] UNIV ILLINOIS,CTR CMPD SEMICOND MICROELECTR,URBANA,IL 61801
关键词
D O I
10.1063/1.339630
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1495 / 1499
页数:5
相关论文
共 14 条
[1]   ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].
ANDO, T ;
FOWLER, AB ;
STERN, F .
REVIEWS OF MODERN PHYSICS, 1982, 54 (02) :437-672
[2]  
BELYANTSEV AM, 1986, JETP LETT+, V43, P437
[3]   THEORY OF ELECTRON AND HOLE IMPACT IONIZATION IN QUANTUM WELL AND STAIRCASE SUPERLATTICE AVALANCHE PHOTODIODE STRUCTURES [J].
BRENNAN, K .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) :2197-2205
[4]   UNIFIED THEORY OF THERMIONIC AND FIELD EMISSION FROM SEMICONDUCTORS [J].
CHRISTOV, SG .
PHYSICA STATUS SOLIDI, 1967, 21 (01) :159-&
[5]  
Coleman J. J., 1985, GALLIUM ARSENIDE TEC, P79
[6]  
DUKE CB, 1969, SOLID STATE PHYSIC S, V10
[7]   NEGATIVE FIELD-EFFECT MOBILITY ON (100) SI SURFACES [J].
FANG, FF ;
HOWARD, WE .
PHYSICAL REVIEW LETTERS, 1966, 16 (18) :797-&
[8]   Electron emission in intense electric fields [J].
Fowler, RH ;
Nordheim, L .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-CONTAINING PAPERS OF A MATHEMATICAL AND PHYSICAL CHARACTER, 1928, 119 (781) :173-181
[9]   NEW ULTRAFAST SWITCHING MECHANISM IN SEMICONDUCTOR HETEROSTRUCTURES [J].
HESS, K ;
HIGMAN, TK ;
EMANUEL, MA ;
COLEMAN, JJ .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (10) :3775-3777
[10]  
Kemble EC., 1937, FUNDAMENTAL PRINCIPL