HOT-ELECTRON TRANSPORT IN IN0.53GA0.47AS

被引:24
作者
LONG, AP
BETON, PH
KELLY, MJ
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D O I
10.1063/1.339567
中图分类号
O59 [应用物理学];
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页码:1842 / 1849
页数:8
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共 15 条
[1]  
BETON PH, UNPUB
[2]   MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE [J].
FAWCETT, W ;
BOARDMAN, AD ;
SWAIN, S .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (09) :1963-&
[3]   HOT-ELECTRON SPECTROSCOPY OF GAAS [J].
HAYES, JR ;
LEVI, AFJ ;
WIEGMANN, W .
PHYSICAL REVIEW LETTERS, 1985, 54 (14) :1570-1572
[4]   TUNNELING HOT-ELECTRON TRANSFER AMPLIFIER - A HOT-ELECTRON GAAS DEVICE WITH CURRENT GAIN [J].
HEIBLUM, M ;
THOMAS, DC ;
KNOEDLER, CM ;
NATHAN, MI .
APPLIED PHYSICS LETTERS, 1985, 47 (10) :1105-1107
[5]  
HOLLIS MA, 1983, THESIS CORNELL U
[6]   INGAAS-INALGAAS HOT-ELECTRON TRANSISTORS WITH CURRENT GAIN OF 15 [J].
IMAMURA, K ;
MUTO, S ;
FUJII, T ;
YOKOYAMA, N ;
HIYAMIZU, S ;
SHIBATOMI, A .
ELECTRONICS LETTERS, 1986, 22 (21) :1148-1150
[7]   MONTE-CARLO SIMULATION OF ALGAAS/GAAS HOT-ELECTRON TRANSISTORS [J].
IMANAGA, S ;
KAWAI, H ;
KANEKO, K ;
WATANABE, N .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (09) :3281-3288
[8]   ELECTRON-SCATTERING INTERACTION WITH COUPLED PLASMON-POLAR-PHONON MODES IN DEGENERATE SEMICONDUCTORS [J].
KIM, ME ;
DAS, A ;
SENTURIA, SD .
PHYSICAL REVIEW B, 1978, 18 (12) :6890-6899
[9]   INJECTED-HOT-ELECTRON TRANSPORT IN GAAS [J].
LEVI, AFJ ;
HAYES, JR ;
PLATZMAN, PM ;
WIEGMANN, W .
PHYSICAL REVIEW LETTERS, 1985, 55 (19) :2071-2073
[10]   ALLOY SCATTERING AND HIGH-FIELD TRANSPORT IN TERNARY AND QUATERNARY 3-5 SEMICONDUCTORS [J].
LITTLEJOHN, MA ;
HAUSER, JR ;
GLISSON, TH ;
FERRY, DK ;
HARRISON, JW .
SOLID-STATE ELECTRONICS, 1978, 21 (01) :107-114