ABSORPTION DUE TO BOUND EXCITONS IN SILICON

被引：74

作者：

DEAN, PJ

FLOOD, WF

KAMINSKY, G

机构：

来源：

PHYSICAL REVIEW | 1967年 / 163卷 / 03期

关键词：

D O I：

10.1103/PhysRev.163.721

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：721 / &

共 20 条

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