CRYSTALLOGRAPHIC NATURE AND FORMATION MECHANISMS OF HIGHLY IRREGULAR STRUCTURE IN IMPLANTED AND ANNEALED SI LAYERS

被引：11

作者：

KOMAROV, FF

SOLOVYEV, VS

SHIRYAYEV, SY

机构：

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1979年 / 42卷 / 3-4期

关键词：

D O I：

10.1080/00337577908209134

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：169 / 178

页数：10

共 27 条

[1]

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MAYER, JW ;

SIGMON, TW .

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[4] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J].

CSEPREGI, L ;

MAYER, JW ;

SIGMON, TW .

APPLIED PHYSICS LETTERS, 1976, 29 (02) :92-93

[5]

DAVIDSON SM, 1970, P EUROPEAN C ION IMP, P19

[6]

GERASIMENKO NN, 1975, FIZ TEKH POLUPROV, V5, P1700

[7]

Gotz G., 1977, Experimentelle Technik der Physik, V25, P71

[8]

GOTZ G, 1975, 6 T VSES SOV FIZ VZA, P513

[9]

HIRSH PB, 1965, TRANSMISSION ELECTRO

[10] EPITAXIAL GROWTH OF METALS ON ROCKSALT FACES CLEAVED IN VACUUM .2. ORIENTATION AND STRUCTURE OF GOLD PARTICLES FORMED IN ULTRAHIGH VACUUM [J].

INO, S .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, 21 (02) :346-&

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