GROWTH OF NUMBER OF SWITCHED-ON MICROPLASMAS IN SILICON AVALANCHE DIODES

被引：0

|

作者：

GREKHOV, IV

SEREZHKI.YN

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1970年 / 4卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：513 / +

页数：1

相关论文

共 50 条

[1] INVESTIGATION OF MICROPLASMAS IN INP AVALANCHE PHOTO-DIODES
CAPASSO, F
PETROFF, PM
BONNER, WB
SUMSKI, S
ELECTRON DEVICE LETTERS, 1980, 1 (03): : 27 - 29
[2] DEFECT MICROSTRUCTURE AND MICROPLASMAS IN SILICON AVALANCHE PHOTODIODES
LESNIAK, M
HOLT, DB
JOURNAL OF MATERIALS SCIENCE, 1987, 22 (10) : 3547 - 3555
[3] The Effect of Maintaining a High Conductivity State in High-Voltage GaAs Diodes Switched-on in the Delayed Avalanche Breakdown Mode
A. V. Rozhkov
M. S. Ivanov
P. B. Rodin
Technical Physics Letters, 2023, 49 : S116 - S120
[4] The Effect of Maintaining a High Conductivity State in High-Voltage GaAs Diodes Switched-on in the Delayed Avalanche Breakdown Mode
Rozhkov, A. V.
Ivanov, M. S.
Rodin, P. B.
TECHNICAL PHYSICS LETTERS, 2023, 49 (SUPPL 2) : S116 - S120
[5] Avalanche pulse rate instability in silicon diodes used in random number generators
Baranouski, Aleh K.
EDM 2007: 8TH INTERNATIONAL WORKSHOP AND TUTORIALS ON ELECTRON DEVICES AND MATERIALS, 2007, : 123 - 124
[6] SILICON DIFFUSED JUNCTION AVALANCHE DIODES
VELORIC, HS
SMITH, KD
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (04) : 222 - 226
[7] Tunneling recombination in silicon avalanche diodes
Bulyarskii, SV
Ionychev, VK
Kuz'min, VV
SEMICONDUCTORS, 2003, 37 (01) : 115 - 118
[8] HOMOGENEOUS AVALANCHE BREAKDOWN IN SILICON DIODES
ZUBRILOV, AS
KOTIN, OA
SHUMAN, VB
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (04): : 380 - 382
[9] COMPUTER CALCULATION OF SILICON AVALANCHE DIODES
MATSUMURA, M
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (07) : 514 - +
[10] Tunneling recombination in silicon avalanche diodes
S. V. Bulyarskii
V. K. Ionychev
V. V. Kuz’min
Semiconductors, 2003, 37 : 115 - 118

← 1 2 3 4 5 →