The Influence of Silicon Doping on Electrical Characteristics of Solution Processed Silicon Zinc Tin Oxide Thin Film Transistor

被引：1
|
作者：
Lee, Sang Yeol [1 ]
Choi, Jun Young [2 ,3 ]
机构：
[1] Cheongju Univ, Dept Semicond Engn, Cheongju 360764, South Korea
[2] Korea Univ, Dept Elect Engn, Seoul 136701, South Korea
[3] Korea Univ, Inst Nano Sci, Seoul 136701, South Korea
来源：
TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS | 2015年 / 16卷 / 02期
关键词：
Oxide; Thin film transistor (TFT); Solution process;
D O I：
10.4313/TEEM.2015.16.2.103
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Effect of silicon doping into ZnSnO systems was investigated using solution process. Addition of silicon was used to suppress oxygen vacancy generation. The transfer characteristics of the device showed threshold voltage shift toward the positive direction with increasing Si content due to the high binding energy of silicon atoms with oxygen. As a result, the carrier concentration was decreased with increasing Si content.
引用
收藏
页码：103 / 105
页数：3
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