GALNAS JUNCTION FET FULLY DRY ETCHED BY METAL ORGANIC REACTIVE ION ETCHING TECHNIQUE

被引：40
作者：
LECROSNIER, D
HENRY, L
LECORRE, A
VAUDRY, C
机构：
[1] CNET, Lannion, Fr, CNET, Lannion, Fr
来源：
ELECTRONICS LETTERS | 1987年 / 23卷 / 24期
关键词：
D O I：
10.1049/el:19870871
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
TRANSISTORS, FIELD EFFECT
引用
收藏
页码：1254 / 1255
页数：2
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ELECTRONICS LETTERS, 1986, 22 (06) :313-315
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