DAMAGE PROFILE DETERMINATION OF ION-IMPLANTED SI LAYERS BY ELLIPSOMETRY

被引:20
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MOTOOKA, T
WATANABE, K
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10.1063/1.328231
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O59 [应用物理学];
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页码:4125 / 4129
页数:5
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[2]   RECOIL CONTRIBUTION TO ION-IMPLANTATION ENERGY-DEPOSITION DISTRIBUTIONS [J].
BRICE, DK .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) :3385-3394
[3]   REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J].
CSEPREGI, L ;
KENNEDY, EF ;
GALLAGHER, TJ ;
MAYER, JW ;
SIGMON, TW .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) :4234-4240
[4]   INVESTIGATION OF ION-IMPLANTED GAP LAYERS BY ELLIPSOMETRY [J].
DOBBS, BC ;
ANDERSON, WJ ;
PARK, YS .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (12) :5052-5056
[5]   THERMAL-OXIDATION OF SILICON IN VARIOUS OXYGEN PARTIAL PRESSURES DILUTED BY NITROGEN [J].
KAMIGAKI, Y ;
ITOH, Y .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (07) :2891-2896
[6]  
KISHINO S, 1973, 4TH P C SOL STAT DEV, P118
[7]   OBSERVATION OF ION BOMBARDMENT DAMAGE IN SILICON [J].
MAZEY, DJ ;
NELSON, RS ;
BARNES, RS .
PHILOSOPHICAL MAGAZINE, 1968, 17 (150) :1145-&
[8]   OPTICAL REFLECTION STUDIES OF DAMAGE IN ION IMPLANTED SILICON [J].
MCGILL, TC ;
KURTIN, SL ;
SHIFRIN, GA .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) :246-+
[9]   CORRELATION BETWEEN LATTICE DAMAGE AND ELECTRICAL ACTIVATION OF PHOSPHORUS-IMPLANTED SILICON [J].
MIYAO, M ;
YOSHIHIRO, N ;
TOKUYAMA, T ;
MITSUISHI, T .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) :2573-2575
[10]   CHARACTERIZATION OF (P-31)+-IMPLANTED SI LAYERS BY ELLIPSOMETRY [J].
NAKAMURA, K ;
GOTOH, T ;
KAMOSHIDA, M .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) :3985-3989