MOS DEVICE FABRICATION USING SPUTTER-DEPOSITED GATE OXIDE AND POLYCRYSTALLINE SILICON LAYERS

被引：7

作者：

HABERLE, K ^{[1
]}

FROSCHLE, E ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN, INST SEMICOND ELECTR, BEREICH SONDERFORSCH FESTKORPERELEKTR 56, D-5100 AACHEN, GERMANY

来源：

关键词：

D O I：

10.1016/0038-1101(80)90102-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：855 / +

页数：1

共 28 条

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