IMPURITY EFFECTS ON ANNEALING OF RADIATION DEFECTS IN P-TYPE SILICON

被引：4

作者：

FANG, PH

TARKO, H

DREVINSK.PJ

ILES, P

机构：

来源：

APPLIED PHYSICS LETTERS | 1970年 / 17卷 / 10期

关键词：

D O I：

10.1063/1.1653256

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：426 / &

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