IMPURITY EFFECTS ON ANNEALING OF RADIATION DEFECTS IN P-TYPE SILICON

被引：4
作者：
FANG, PH
TARKO, H
DREVINSK.PJ
ILES, P
机构：
来源：
APPLIED PHYSICS LETTERS | 1970年 / 17卷 / 10期
关键词：
D O I：
10.1063/1.1653256
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：426 / &
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