MEASUREMENT OF THE FACET MODAL REFLECTIVITY SPECTRUM IN HIGH-QUALITY SEMICONDUCTOR TRAVELING-WAVE AMPLIFIERS

被引：15

作者：

MERRITT, SA

DAUGA, C

FOX, S

WU, IF

DAGENAIS, M

机构：

[1] Joint Program for Advanced Electronic Materials, Department of Electrical Engineering, University of Maryland, College Park

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 1995年 / 13卷 / 03期

关键词：

D O I：

10.1109/50.372438

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate that the Hakki-Paoli technique, commonly used for measuring single pass gain in semiconductor lasers, can be modified to measure facet modal reflectivity down to 10(-6) in semiconductor laser amplifiers. We also introduce a new technique based on Fourier and Hilbert transformations of the spontaneous emission spectrum (the SET method) which enhances the signal-to-noise ratio and permits modal reflectivity measurements down to 10(-7).

引用

页码：430 / 433

页数：4

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