Modeling of tunneling current density of GeC based double barrier multiple quantum well resonant tunneling diode

被引：2
作者：
Dey, Swagata [1 ]
Chakraborty, Vedatrayee [2 ]
Mukhopadhyay, Bratati [1 ]
Sen, Gopa [1 ]
机构：
[1] Univ Calcutta, Inst Radio Phys & Elect, Kolkata 700009, India
[2] BP Poddar Inst Management & Technol, ECE Dept, Kolkata 700052, India
来源：
JOURNAL OF SEMICONDUCTORS | 2018年 / 39卷 / 10期
关键词：
DBQW; MQW; RTD; NDR; tunneling current density;
D O I：
10.1088/1674-4926/39/10/104003
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The double barrier quantum well (DBQW) resonant tunneling diode (RTD) structure made of SiGeSn/GeC/SiGeSn alloys grown on Ge substrate is analyzed. The tensile strained Ge1-zCz on Si1-x-yGexSny heterostructure provides a direct band gap type I configuration. The transmission coefficient and tunneling current density have been calculated considering single and multiple quantum wells. A comparative study of tunnelling current of the proposed structure is done with the existing RTD structure based on GeSn/SiGeSn DBH. A higher value of the current density for the proposed structure has been obtained.
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页数：5
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