SELF-OSCILLATIONS AND DYNAMIC BEHAVIOR OF AGED INGAASP LASER-DIODES

被引：0

作者：

CHANNIN, DJ

OLSEN, GH

ETTENBERG, M

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TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

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引用

页码：207 / 210

页数：4

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[1] INGAASP LASER-DIODES
OLSEN, GH
OPTICAL ENGINEERING, 1981, 20 (03) : 440 - 445
[2] TEMPERATURE CHARACTERISTICS OF INGAASP LASER-DIODES AND LIGHT-EMITTING-DIODES
KAMIYA, T
KAMATA, N
JAPAN ANNUAL REVIEWS IN ELECTRONICS COMPUTERS & TELECOMMUNICATIONS, 1983, 5 : 59 - 69
[3] SELF-OSCILLATIONS IN A TRANSMISSION LINE WITH TUNNEL DIODES
RABINOVICH, MI
RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1966, 11 (08): : 1271 - +
[4] HIGH-POWER LASER-DIODES BASED ON INGAASP ALLOYS
RAZEGHI, M
NATURE, 1994, 369 (6482) : 631 - 633
[5] MOVPE GROWTH OF INGAASP LASER-DIODES USING TERTIARYBUTYLARSINE AND TERTIARYBUTYLPHOSPHINE
KURAMATA, A
KOBAYASHI, H
OGITA, S
YAMAZAKI, S
INSTITUTE OF PHYSICS CONFERENCE SERIES, 1992, (120): : 559 - 564
[6] OPTOELECTRONIC MEASUREMENT OF PICOSECOND TURN-ON DELAY IN INGAASP LASER-DIODES
ADOMAITIS, E
BLIXT, P
KROTKUS, A
APPLIED PHYSICS LETTERS, 1989, 54 (26) : 2622 - 2624
[7] DYNAMIC MODE INTERACTION IN MULTIMODE LASER-DIODES
KAJIYAMA, K
HATA, S
SAKATA, S
APPLIED PHYSICS, 1978, 16 (02): : 155 - 158
[8] A PROPOSED NEW METHOD FOR DAMPING RELAXATION OSCILLATIONS IN LASER-DIODES
KATZ, J
MARGALIT, S
YARIV, A
ELECTRON DEVICE LETTERS, 1982, 3 (11): : 333 - 335
[9] V-GROOVED-SUBSTRATE BURIED HETEROSTRUCTURE INGAASP/INP LASER-DIODES
IMAI, H
ISHIKAWA, H
HORI, K
FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, 1982, 18 (04): : 541 - 561
[10] TARGETING PERIODIC OSCILLATIONS OF EXTERNAL-CAVITY LASER-DIODES
LANGLEY, LN
TUROVETS, S
SHORE, KA
OPTICS LETTERS, 1995, 20 (07) : 725 - 727