SYMMETRY OF THE EL2 CENTER IN GaAs

被引：0
|
作者：
Bagraev, N. T. [1 ]
机构：
[1] Acad Sci USSR, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
MODERN PHYSICS LETTERS B | 1991年 / 5卷 / 29期
关键词：
D O I：
10.1142/S0217984991002318
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Optical absorption measurements on uniaxially stressed GaAs single crystals point to the C-3V symmetry for the D-0, D+, and D++ charge states of the EL2 double donor and allow to assign these states respectively to the L, Gamma, and X valleys of the conduction band.
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页码：1925 / 1931
页数：7
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