SYMMETRY OF THE EL2 CENTER IN GaAs

被引：0
|
作者：
Bagraev, N. T. [1 ]
机构：
[1] Acad Sci USSR, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
MODERN PHYSICS LETTERS B | 1991年 / 5卷 / 29期
关键词：
D O I：
10.1142/S0217984991002318
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Optical absorption measurements on uniaxially stressed GaAs single crystals point to the C-3V symmetry for the D-0, D+, and D++ charge states of the EL2 double donor and allow to assign these states respectively to the L, Gamma, and X valleys of the conduction band.
引用
收藏
页码：1925 / 1931
页数：7
相关论文
共 50 条
  • [1] SYMMETRY OF THE EL2 CENTER IN GAAS
    BAGRAEV, NT
    JETP LETTERS, 1991, 53 (11) : 573 - 578
  • [2] SITE SYMMETRY OF THE EL2 CENTER IN GAAS
    LEVINSON, M
    KAFALAS, JA
    PHYSICAL REVIEW B, 1987, 35 (17): : 9383 - 9386
  • [3] THE EL2 CENTER IN GAAS - SYMMETRY AND METASTABILITY
    BAGRAEV, NT
    JOURNAL DE PHYSIQUE I, 1991, 1 (10): : 1511 - 1527
  • [4] SYMMETRY OF THE EL2 DEFECT IN GAAS
    FIGIELSKI, T
    WOSINSKI, T
    PHYSICAL REVIEW B, 1987, 36 (02): : 1269 - 1272
  • [5] ON THE PHYSICAL ORIGINS OF THE EL2 CENTER IN GAAS
    WANG, WL
    LI, SS
    LEE, DH
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (01) : 196 - 199
  • [6] PIEZOSPECTROSCOPIC EVIDENCE FOR TETRAHEDRAL SYMMETRY OF THE EL2 DEFECT IN GAAS
    TRAUTMAN, P
    WALCZAK, JP
    BARANOWSKI, JM
    PHYSICAL REVIEW B, 1990, 41 (05): : 3074 - 3077
  • [7] DEFECT PAIRS AND CLUSTERS RELATED TO THE EL2 CENTER IN GAAS
    MAKRAMEBEID, S
    BOHER, P
    REVUE DE PHYSIQUE APPLIQUEE, 1988, 23 (05): : 847 - 862
  • [8] CHARACTERIZATION OF THE EL2 CENTER IN GAAS BY OPTICAL ADMITTANCE SPECTROSCOPY
    DUENAS, S
    CASTAN, E
    DEDIOS, A
    BAILON, L
    BARBOLLA, J
    PEREZ, A
    JOURNAL OF APPLIED PHYSICS, 1990, 67 (10) : 6309 - 6314
  • [9] EL2 DEFECT IN GAAS
    KAMINSKA, M
    WEBER, ER
    IMPERFECTIONS IN III/V MATERIALS, 1993, 38 : 59 - 89
  • [10] EL2 DEFECT IN GAAS
    KAMINSKA, M
    PHYSICA SCRIPTA, 1987, T19B : 551 - 557
12345