N-TYPE AND P-TYPE DOPANT PROFILES IN DISTRIBUTED BRAGG REFLECTOR STRUCTURES AND THEIR EFFECT ON RESISTANCE

被引：41
作者：
KOPF, RF
SCHUBERT, EF
DOWNEY, SW
EMERSON, AB
机构：
[1] AT and T Bell Laboratories, Murray Hill
来源：
APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 15期
关键词：
D O I：
10.1063/1.108385
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the n- and p-type dopant profiles obtained in AlAs/GaAs structures. When structures were doped with Si or C, targeted dopant profiles were achieved. However, when Be was used, significant redistribution of the dopant occurred, which resulted in an accumulation of Be on the GaAs side of the heterointerfaces, and a maximum incorporation of Be of approximately 5 X 10(-17) cm-3 in the AlAs layers. Similar results were obtained for Be dopant profiles in AlGaAs/AlAs quarter-wave distributed Bragg reflectors (DBR). Be segregation and diffusion during growth resulted in a high electrical resistance in these DBR structures. The resistance was significantly reduced when the structure was doped with C.
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页码：1820 / 1822
页数：3
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共 13 条
[1]   ULTRAHIGH DOPING OF GAAS BY CARBON DURING METALORGANIC MOLECULAR-BEAM EPITAXY [J].
ABERNATHY, CR ;
PEARTON, SJ ;
CARUSO, R ;
REN, F ;
KOVALCHIK, J .
APPLIED PHYSICS LETTERS, 1989, 55 (17) :1750-1752
[2]   DEPTH PROFILING RESONANCE IONIZATION MASS-SPECTROMETRY OF BE-DOPED, LAYERED III-V COMPOUND SEMICONDUCTORS [J].
DOWNEY, SW ;
EMERSON, AB ;
KOPF, RF ;
KUO, JM .
SURFACE AND INTERFACE ANALYSIS, 1990, 15 (12) :781-785
[3]   RESONANCE IONIZATION MASS-SPECTROMETRY OF ALXGA1-XAS - DEPTH RESOLUTION, SENSITIVITY, AND MATRIX EFFECTS [J].
DOWNEY, SW ;
KOPF, RF ;
SCHUBERT, EF ;
KUO, JM .
APPLIED OPTICS, 1990, 29 (33) :4938-4942
[4]   QUANTITATIVE DEPTH PROFILING RESONANCE IONIZATION MASS-SPECTROMETRY OF GAAS/ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].
DOWNEY, SW ;
EMERSON, AB ;
KOPF, RF .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (01) :385-387
[5]   VERTICAL-CAVITY SURFACE-EMITTING LASERS - DESIGN, GROWTH, FABRICATION, CHARACTERIZATION [J].
JEWELL, JL ;
HARBISON, JP ;
SCHERER, A ;
LEE, YH ;
FLOREZ, LT .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) :1332-1346
[6]   GROWTH-RATE AND COMPOSITION CALIBRATION OF III/V MATERIALS ON GAAS AND INP USING REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATIONS [J].
KOPF, RF ;
KUO, JM ;
OHRING, M .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (04) :1920-1923
[7]   CARBON DOPING IN MOLECULAR-BEAM EPITAXY OF GAAS FROM A HEATED GRAPHITE FILAMENT [J].
MALIK, RJ ;
NOTTENBERG, RN ;
SCHUBERT, EF ;
WALKER, JF ;
RYAN, RW .
APPLIED PHYSICS LETTERS, 1988, 53 (26) :2661-2663
[8]   BERYLLIUM DELTA-DOPING OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].
SCHUBERT, EF ;
KUO, JM ;
KOPF, RF ;
LUFTMAN, HS ;
HOPKINS, LC ;
SAUER, NJ .
JOURNAL OF APPLIED PHYSICS, 1990, 67 (04) :1969-1979
[9]   DIFFUSION AND DRIFT OF SI DOPANTS IN DELTA-DOPED N-TYPE ALXGA1-XAS [J].
SCHUBERT, EF ;
TU, CW ;
KOPF, RF ;
KUO, JM ;
LUNARDI, LM .
APPLIED PHYSICS LETTERS, 1989, 54 (25) :2592-2594
[10]   ELIMINATION OF HETEROJUNCTION BAND DISCONTINUITIES BY MODULATION DOPING [J].
SCHUBERT, EF ;
TU, LW ;
ZYDZIK, GJ ;
KOPF, RF ;
BENVENUTI, A ;
PINTO, MR .
APPLIED PHYSICS LETTERS, 1992, 60 (04) :466-468
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