UPHILL DIFFUSION MECHANISM IN PROTON-IRRADIATED SILICON

被引：24

作者：

MORIKAWA, Y

YAMAMOTO, K

NAGAMI, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 12期

关键词：

D O I：

10.1063/1.91667

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：997 / 999

页数：3

共 16 条

[1]

ABE T, 1971, P US JAPAN SEMINAR I, P57

[2] IMPURITY-PEAK FORMATION DURING PROTON-ENHANCED DIFFUSION OF PHOSPHORUS AND BORON IN SILICON [J].

AKUTAGAWA, W ;

DUNLAP, HL ;

HART, R ;

MARSH, OJ .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :777-782

[3]

BARUCH P, 1975, ION IMPLANTATION SEM, P189

[4]

BARUCH P, 1961, DISCUSS FARADAY SOC, V31, P76

[5] ANOMALOUS PENETRATION OF XENON IN TUNGSTEN CRYSTALS-A DIFFUSION EFFECT [J].

DAVIES, JA ;

JESPERSGARD, P .

CANADIAN JOURNAL OF PHYSICS, 1966, 44 (07) :1631-+

[6]

Forsythe G. E., 1960, FINITE DIFFERENCE ME

[7] INFLUENCE OF TEMPERATURE ON PHOSPHORUS ION BEHAVIOR DURING SILICON BOMBARDMENT [J].

GLOTIN, PM .

CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) :705-&

[8]

HORKER WK, 1975, ION IMPLANTATION SEM, P201

[9] REMARKS ON VACANCY MECHANISMS IN ION-IMPLANTATION [J].

KURATA, M ;

MORIKAWA, Y ;

NAGAMI, K ;

KURODA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (03) :472-473

[10] ENHANCED DIFFUSION AND OUT-DIFFUSION IN ION-IMPLANTED SILICON [J].

MEYER, O ;

MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) :4166-&

← 1 2 →