METHOD FOR DETERMINATION OF THE BAND OFFSET AT A HETEROJUNCTION FROM CAPACITANCE-VOLTAGE CHARACTERISTICS OF AN M-S HETEROSTRUCTURE

A method is proposed for the determination of the band structure at a heterojunction from the dependences of the dopant concentration on the voltage by numerical differentiation of the capacitance-voltage characteristics of m-s structures with an isotypic heterojunction. The method has the advantages of a high precision (the error does not exceed 3%) and simplicity. Approximate expressions are derived for the integral function K(u), which determines the thickness of the conducting region. The use of approximate expressions for K(u) makes it possible to reduce considerably the calculation time.