VARIATION OF FIELD EFFECT MOBILITY AND HALL EFFECT MOBILITY WITH THE THICKNESS OF THE DEPOSITED FILMS OF TELLURIUM

被引：16
作者：
GHOSH, SK
机构：
来源：
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1961年 / 19卷 / 1-2期
关键词：
D O I：
10.1016/0022-3697(61)90057-9
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
引用
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页码：61 / 65
页数：5
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