ABSOLUTE SPIN SUSCEPTIBILITIES AND OTHER ESR PARAMETERS OF HEAVILY DOPED N-TYPE SILICON .2. UNIFIED TREATMENT

被引：152
作者：
QUIRT, JD [1 ]
MARKO, JR [1 ]
机构：
[1] UNIV BRITISH COLUMBIA, DEPT PHYS, VANCOUVER 8, BRITISH COLUMBI, CANADA
来源：
PHYSICAL REVIEW B | 1973年 / 7卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.7.3842
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：3842 / 3858
页数：17
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