HIGH-ENERGY NEUTRAL ATOMS IN THE SPUTTERING OF ZNO

被引:68
作者
TOMINAGA, K
UESHIBA, N
SHINTANI, Y
TADA, O
机构
关键词
D O I
10.1143/JJAP.20.519
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:519 / 526
页数:8
相关论文
共 17 条
[1]  
Aston FW, 1907, P R SOC LOND A-CONTA, V79, P80, DOI 10.1098/rspa.1907.0016
[2]   PRODUCTION OF HIGH-ENERGY NEUTRAL ATOMS BY SCATTERING OF IONS AT SOLID SURFACES AND ITS RELATION TO SPUTTERING [J].
BRODIE, I ;
LAMONT, LT ;
JEPSEN, RL .
PHYSICAL REVIEW LETTERS, 1968, 21 (17) :1224-&
[3]   ZINC-OXIDE THIN-FILM SURFACE-WAVE TRANSDUCERS [J].
HICKERNELL, FS .
PROCEEDINGS OF THE IEEE, 1976, 64 (05) :631-635
[4]   SECONDARY-ELECTRON EJECTION FROM CONTAMINATED METAL-SURFACE BY HE AND AR ATOMS [J].
KADOTA, K ;
KANEKO, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (10) :1554-1561
[5]   STUDIES OF OPTIMUM CONDITIONS FOR GROWTH OF RF-SPUTTERED ZNO FILMS [J].
KHURIYAKUB, BT ;
KINO, GS ;
GALLE, P .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) :3266-3272
[6]  
KOICHI K, 1973, JPN J APPL PHYS, V12, P1297
[7]   CONTROLLED TEXTURE OF REACTIVELY RF-SPUTTERED ZNO THIN-FILMS [J].
MANIV, S ;
ZANGVIL, A .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (05) :2787-2792
[8]   SPATIAL-DISTRIBUTION OF DEPOSITION RATES IN DC DIODE SPUTTERING OF ZNO THIN-FILM [J].
MINAKATA, M ;
CHUBACHI, N ;
KIKUCHI, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (12) :1852-1852
[9]   VARIATION OF C-AXIS ORIENTATION OF ZNO THIN-FILMS DEPOSITED BY DC DIODE SPUTTERING [J].
MINAKATA, M ;
CHUBACHI, N ;
KIKUCHI, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (03) :474-475
[10]   HIGHLY ORIENTED ZNO FILMS BY RF SPUTTERING OF HEMISPHERICAL ELECTRODE SYSTEM [J].
OHJI, K ;
TOHDA, T ;
WASA, K ;
HAYAKAWA, S .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) :1726-1728