THE EFFECT OF OXYGEN INCORPORATION IN SEMIINSULATING (ALXGA1-X)YIN1-YP

被引：16

作者：

MCCALMONT, JS ^{[1
]}

CASEY, HC ^{[1
]}

WANG, TY ^{[1
]}

STRINGFELLOW, GB ^{[1
]}

机构：

[1] UNIV UTAH,DEPT MAT SCI & ENGN,SALT LAKE CITY,UT 84112

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 02期

关键词：

D O I：

10.1063/1.350396

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Oxygen-doped, semi-insulating layers of (AlxGa1-x)yIn1-yP with x = 0.4 were grown on GaAs using organometallic vapor phase epitaxy (OMVPE). Secondary-ion mass spectrometry measurements show that the oxygen incorporation is proportional to the flow rate of O2 into the OMVPE reactor. Two-terminal metal-insulator-semiconductor devices were fabricated and used to evaluate the electrical characteristics of the (AlxGa1-x)yIn1-yP. Traps into the (AlxGa1-x)yIn1-yP bulk behave like DX centers, and are believed to be related to residual Si contamination. Increasing the oxygen concentration in the (AlxGa1-x)yIn1-yP layer decreases the trap concentration by the formation of oxygen complexes with the Si atoms.

引用

页码：1046 / 1048

页数：3

共 8 条

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