GENERALIZED CURRENT AND CONDUCTANCE EXTREMA IN METAL-INSULATOR-SEMICONDUCTOR TUNNEL JUNCTIONS

被引:3
作者
CHANG, LL
MOORE, JS
机构
[1] Department of Electrical Engineering, Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge
关键词
D O I
10.1063/1.1657389
中图分类号
O59 [应用物理学];
学科分类号
摘要
A unified analysis of the current and conductance in metal-insulator- degenerate semiconductor tunnel junctions has been made by taking into account the nonparabolic momentum in the insulator. The current may either increase monotonically with voltages or exhibit a maximum at a voltage less than the Fermi energy of the semiconductor. For the conductance, a minimum always occurs at a voltage equal to or less than the Fermi energy and an additional pair of extrema may exist. The criteria for the various cases are established in terms of a set of reduced parameters of the junction. The effect of nonequal electron masses in the semiconductor and the insulator is also considered and shown to be important in determining the different shapes of the characteristics. © 1970 The American Institute of Physics.
引用
收藏
页码:5315 / &
相关论文
共 25 条
[1]   CONDUCTANCE EXTREMA IN METAL-INSULATOR-SEMICONDUCTOR TUNNEL JUNCTIONS [J].
CHANG, LL .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (03) :1455-&
[2]   ELECTRON TUNNELING BETWEEN A METAL AND A SEMICONDUCTOR - CHARACTERISTICS OF AL-AL2O3-SNTE AND -GETE JUNCTIONS [J].
CHANG, LL ;
STILES, PJ ;
ESAKI, L .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (11) :4440-&
[3]   EFFECT OF NONPARABOLIC MOMENTUM ON FOWLER-NORDHEIM TUNNELING THROUGH AN INSULATOR [J].
CHANG, LL .
PHYSICS LETTERS A, 1969, A 29 (03) :125-&
[4]  
CHANG LL, 1969, B AM PHYS SOC, V14, P415
[5]   ELECTRON TUNNELING FROM METAL TO INSB - (SEMICONDUCTOR BAND STRUCTURE - 4.2 DEGREES - MOS STRUCTURES - SINGLE CRYSTALS - E/T) [J].
CHANG, LL ;
ESAKI, L ;
JONA, F .
APPLIED PHYSICS LETTERS, 1966, 9 (01) :21-&
[6]   ELECTRON TUNNELING IN METAL-SEMICONDUCTOR BARRIERS [J].
CONLEY, JW ;
DUKE, CB ;
MAHAN, GD ;
TIEMANN, JJ .
PHYSICAL REVIEW, 1966, 150 (02) :466-&
[7]   THERMIONIC-FIELD RESISTANCE MAXIMA IN METAL-SEMICONDUCTOR (SCHOTTKY) BARRIERS [J].
CROWELL, CR ;
RIDEOUT, VL .
APPLIED PHYSICS LETTERS, 1969, 14 (03) :85-&
[8]   TUNNELING INTO INTERFACE STATES OF MOS STRUCTURES [J].
DAHLKE, WE .
APPLIED PHYSICS LETTERS, 1967, 10 (10) :261-&
[9]  
ESAKI L, 1966, J PHYS SOC JPN, VS 21, P589
[10]   PHONON-ASSISTED TUNNELING IN BISMUTH TUNNEL JUNCTION [J].
ESAKI, L ;
CHANG, LL ;
STILES, PJ ;
OKANE, DF ;
WISER, N .
PHYSICAL REVIEW, 1968, 167 (03) :637-&