PROPERTIES OF SI-RICH SINX-H FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION

被引：12

作者：

KAYA, C

MA, TP

CHEN, TC

BARKER, RC

机构：

[1] YALE UNIV,CTR MICROELECTR MAT & STRUCT,NEW HAVEN,CT 06520

[2] YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 08期

关键词：

D O I：

10.1063/1.341352

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3949 / 3957

页数：9

共 24 条

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