PROPERTIES OF SI-RICH SINX-H FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION

被引：12

作者：

KAYA, C

MA, TP

CHEN, TC

BARKER, RC

机构：

[1] YALE UNIV,CTR MICROELECTR MAT & STRUCT,NEW HAVEN,CT 06520

[2] YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 08期

关键词：

D O I：

10.1063/1.341352

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3949 / 3957

页数：9

共 24 条

[1]

ANDREWS KW, 1967, ELECTRON DIFFRACTION, P150

[2] REVIEW OF RECENT EXPERIMENTS PERTAINING TO HOLE TRANSPORT IN SI3N4 [J].

ARNETT, PC ;

WEINBERG, ZA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (08) :1014-1018

[3] ANISOTROPIC ETCHING OF SILICON [J].

BEAN, KE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) :1185-1193

[4] CHEMICAL HETEROGENEITY IN OFF STOICHIOMETRY A-SIXNYHZ FROM A COLLECTIVE VIBRATIONAL-MODES STUDY [J].

CHAUSSAT, C ;

BUSTARRET, E ;

DENEUVILLE, A .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 :917-920

[5]

COLEMAN NV, 1968, PHYS STATUS SOLIDI, V25, P241

[6] ELECTRICALLY-ALTERABLE MEMORY USING A DUAL ELECTRON INJECTOR STRUCTURE [J].

DIMARIA, DJ ;

DEMEYER, KM ;

DONG, DW .

ELECTRON DEVICE LETTERS, 1980, 1 (09) :179-181

[7] ELECTRICALLY-ALTERABLE READ-ONLY-MEMORY USING SI-RICH SIO2 INJECTORS AND A FLOATING POLYCRYSTALLINE SILICON STORAGE LAYER [J].

DIMARIA, DJ ;

DEMEYER, KM ;

SERRANO, CM ;

DONG, DW .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) :4825-4842

[8] CRYSTALLOGRAPHIC STUDY OF SEMI-INSULATING POLYCRYSTALLINE SILICON (SIPOS) DOPED WITH OXYGEN-ATOMS [J].

HAMASAKI, M ;

ADACHI, T ;

WAKAYAMA, S ;

KIKUCHI, M .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3987-3992

[9]

HERD SR, 1972, J NONCRYSTAL SOLIDS, V7, P309, DOI DOI 10.1016/0022-3093(72)90267-0

[10] MICROMACHINING OF SILICON MECHANICAL STRUCTURES [J].

KAMINSKY, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :1015-1024

← 1 2 3 →