INFLUENCE OF DEGREE OF IONIC DOPING ON P-TYPE AND N-TYPE REGIONS ON CURRENT-VOLTAGE AND MODULATION CHARACTERISTICS OF A SILICON P-I-N DIODE

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作者：
GUSEV, VM
KURINNYI, VI
KRUGLOV, II
RYZHIKOV, IV
SESTRORE.BV
SINKOV, YA
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1969年 / 3卷 / 06期
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O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：759 / &
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